Sung Min Kim †, Emil B. Song †, Sejoon Lee †‡*,Jinfeng Zhu †, David H. Seo §, Matthew Mecklenburg 
, Sunae Seo ¶, and Kang L. Wang †
, Sunae Seo ¶, and Kang L. Wang †
† Electrical Engineering Department, University of California, Los Angeles, California 90095, United States
‡ Quantum-Functional Semiconductor Research Center,Dongguk University-Seoul, Seoul 100-715, Korea
§ Samsung Advanced Institute of Technology, Yongin, 446-711, Korea
Microelectronics Technology Department, The Aerospace Corporation, Los Angeles, California 90009, United States
¶ Department of Physics, Sejong University, Seoul 143-747, Korea
ACS Nano, Article ASAP
DOI: 10.1021/nn302193q
Publication Date (Web): August 13, 2012
Copyright © 2012 American Chemical Society
A transparent and flexible graphene charge-trap memory (GCTM) composed of a single-layer graphene channel and a 3-dimensional gate stack was fabricated on a polyethylene naphtalate substrate below eutectic temperatures (
110 °C). The GCTM exhibits memory functionality of 8.6 V memory window and 30% data retention per 10 years, while maintaining 80% of transparency in the visible wavelength. Under both tensile and compressive stress, the GCTM shows minimal effect on the program/erase states and the on-state current. This can be utilized for transparent and flexible electronics that require integration of logic, memory, and display on a single substrate with high transparency and endurance under flex.
110 °C). The GCTM exhibits memory functionality of 8.6 V memory window and 30% data retention per 10 years, while maintaining 80% of transparency in the visible wavelength. Under both tensile and compressive stress, the GCTM shows minimal effect on the program/erase states and the on-state current. This can be utilized for transparent and flexible electronics that require integration of logic, memory, and display on a single substrate with high transparency and endurance under flex.
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