Stretchable Semiconductor Technologies with High Areal Coverages and Strain-Limiting Behavior: Demonstration in High-Efficiency Dual-Junction GaInP/GaAs Photovoltaics

1. Jongho Lee¹, 
2. Jian Wu², 
3. Jae Ha Ryu³,
4. Zhuangjian Liu⁴, 
5. Matthew Meitl⁵, 
6. Yong-Wei Zhang⁴, 
7. Yonggang Huang⁶, 
8. John A. Rogers^7,*

Article first published online: 29 MAR 2012

DOI: 10.1002/smll.201102437

Notched islands on a thin elastomeric substrate serve as a platform for dual-junction GaInP/GaAs solar cells with microscale dimensions and ultrathin forms for stretchable photovoltaic modules. These designs allow for a high degree of stretchability and areal coverage, and they provide a natural form of strain-limiting behavior, helping to avoid destructive effects of extreme deformations.